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| CHA3092 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2,3,4 IN DI OUT Vg1 Vg2 Vg3,4 Vdet Typical on wafer measurements : Main Features Broadband performances : 20-33GHz 20dBm output power. 22dB 1.0dB gain Very good broadband input matching On chip output power level DC detector Low DC power consumption, 300mA @ 3.5V Chip size : 0.88 X 1.72 X 0.10 mm Input Rloss : solid line & output Rloss : dash line. Main Characteristics Tamb. = 25C Symbol Fop G P03 Id_small signal Parameter Operating frequency range Small signal gain Output power at 3dB gain compression Bias current Min 20 20 20 Typ 22 23 300 Max 33 Unit GHz dB dBm 400 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. :DSCHA30920356 21-Dec.-00 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3092 20-33GHz Medium Power Amplifier Electrical Characteristics for Broadband Operation Tamb = +25C, Vd1,2,3,4 = 3.5V recommended Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin VSWRout NF Vdet Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Pulsed output power at 1dB compression (1) Output power at 3dB gain compression 3 order intercept point Power added efficiency at saturation Input VSWR (1) Output VSWR (1) Noise figure Detected voltage: at 26GHz @ Pout=20dBm (2) rd Min 20 20 Typ Max 33 Unit GHz dB dB dB dBm dBm dBm % 22 1.0 50 18 20 20 23 29 10 2.0:1 3.0:1 10.0 1 300 400 dB V mA Id_small signal Bias current (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less. (2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vds Ids Vgs Vdg Pin Ta Tstg Parameter Drain bias voltage_small signal (2) Drain bias current_small signal Gate bias voltage Negative Drain Gate voltage (= Vds - Vgs) Maximum continuous input power (2) Maximum peak input power overdrive (3) Operating temperature range Storage temperature range Values 4.0 400 -2 to +0.4 +5 +4 +15 -40 to +85 -55 to +155 Unit V mA V V dBm dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) 3.5V recommended for up to a max of 3dB gain compression. (3) Duration < 1s. Ref. : DSCHA30920356 21-Dec.-00 2/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-33GHz Medium Power Amplifier CHA3092 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Freq. GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt, Id = 300 mA. S11 / 134.5 138.2 140.3 138 141.5 138 137.8 138.8 146.2 131.7 126.9 144.6 148 157.7 157.3 -178.8 -161.1 -151.3 -157.5 -167.6 -175.2 171.5 168 166.5 155.6 140.2 S11 dB -17.1 -17.6 -18.1 -18.9 -19 -19.2 -19.8 -20.9 -20.1 -20.4 -24.3 -25.1 -25.2 -24 -27.7 -28.7 -28.5 -23 -22.1 -20.7 -20 -20.8 -21.1 -21.3 -22 -23 S12 dB -62.3 -62.8 -78.5 -59.9 -62.4 -65.1 -64.3 -60.3 -67.6 -54.2 -58.8 -62.5 -60.5 -55.6 -63.7 -57.1 -55.7 -66 -59.1 -56.6 -57 -57 -52 -52.5 -51.2 -52.7 S12 / -143 137 -31 157.3 126.9 -160.1 157.5 -178.9 138.4 100.1 3.5 -138.8 156 142.2 135.9 126.6 96.9 72.7 125.1 85.1 106.5 97.8 77.7 62.7 75 76.7 S21 dB 4.8 9 13 16.5 19.1 21.1 22.1 22.3 23.9 22.3 22.8 22.8 22.7 22.6 22.9 22.8 22.9 23 22.8 22.7 22.3 22.2 22.2 21.9 21.4 20.8 S21 / 144.2 112.4 78.1 41.6 2.9 -35.2 -74.3 -110.1 -137 -175.3 163.8 134.4 109.3 87.4 61.6 36.7 15.5 -10.2 -33.6 -57.2 -80.4 -101.9 -125.3 -150.2 -174.1 164.1 S22 dB -5.2 -6.3 -7.3 -8.2 -9.1 -8.7 -9.3 -9.2 -9.1 -13.6 -10.9 -12.7 -14 -13.9 -14.3 -13.8 -12.6 -13.1 -12.5 -12.1 -11.8 -11.9 -13.2 -13 -13.1 -13.8 S22 / -173.7 179.4 173.5 168.7 170.5 171.3 165.6 162.4 145.5 161.1 154.2 148.6 155.7 154.7 160.8 170.2 167.1 161.9 162.5 158.2 149.7 144.9 130.1 134.1 124 113.6 Ref. : DSCHA30920356 21-Dec.-00 3/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3092 Bias Conditions : 20-33GHz Medium Power Amplifier Typical On wafer Power Measurements Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt, Id = 300 mA. On wafer Pin / Pout at 26 GHz 30 27 24 21 18 15 12 9 6 3 0 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) On wafer Pin / Pout at 20 GHz 25 24 23 22 21 20 19 18 17 16 15 25 24 23 22 21 20 19 18 17 16 15 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) 30 27 24 21 18 15 12 9 6 3 0 Pout ( dBm ) Pout ( dBm ) P.A.E. ( % ) On wafer Pin / Pout at 22 GHz 25 24 23 22 21 20 19 18 17 16 15 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) 30 27 24 21 18 15 12 9 6 3 0 On wafer Pin / Pout at 28 GHz 25 24 23 22 21 20 19 18 17 16 15 -3 -2 -1 0 1 2 3 4 5 Pin ( dBm ) 30 27 24 21 18 15 12 9 6 3 0 Pout ( dBm ) Pout ( dBm ) Notes : 1- Test conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt. 2- Power measurements are typical ( solid lines ). P.A.E. is representative of on wafer measurements on a typical circuit ( Dotted lines ). Ref. : DSCHA30920356 21-Dec.-00 P.A.E. ( % ) 4/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 P.A.E. ( % ) P.A.E. ( % ) 20-33GHz Medium Power Amplifier Typical Bias Tuning The circuit schematic is given below : Vd1 Vg 2 Vd2,3,4 CHA3092 IN OU T Vg1 Vg 2 Vg 3,4 Vdet For medium power operation, the four drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 300mA. A separate access to the gate voltages of the two first stages ( Vg1,2 ) is provided in order to be able to tune the first stages for the application, as a lower noise amplifier or a multiplier. An additional pad is provided for monitoring the output power, using the Build In Test. This access, when connected to an external resistor of 10 kOhm ( typical value ) provides a DC voltage which follows the output power level. Note : In order to minimize the chip to chip performance spread, it is recommended to bias the chip at fixed drain current Id rather than at fixed Vg voltage. In addition, to prevent unwanted self-biasing of the gates under gain compression, it is preferrable to minimize as much as possible the source resistance of the Vg power supply. Ref. : DSCHA30920356 21-Dec.-00 5/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3092 20-33GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd1,2,3,4 DC Drain supply feed 100pF IN OUT 100pF 100pF To Vgs1 DC Gate supply feed To external control circuit ( 10kOhm ) To Vgs2,3,4 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended. 1720 +/- 35 1370 1030 700 450 290 880 +/- 35 440 270 160 340 640 940 1340 Bonding pad positions. ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA30920356 21-Dec.-00 6/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-33GHz Medium Power Amplifier CHA3092 Ordering Information Chip form : CHA3092-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA30920356 21-Dec.-00 7/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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